Browsing by Author Majlis, B.B.Y.

Showing results 1 to 4 of 4
Issue DateTitleAuthor(s)
2014Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS deviceAtan, N.B. ; Ahmad, I.B. ; Majlis, B.B.Y. 
2019Influence of optimization of control factors on threshold voltage of 18 nm HfO2/TiSi2 NMOSAtan, N.B. ; Majlis, B.B.Y. ; Ahmad, I.B. ; Chong, K.H. 
2015Influence of process parameters on threshold voltage and leakage current in 18nm NMOS deviceAtan, N.B. ; Ahmad, I.B. ; Majlis, B.B.Y. ; Fauzi, I.B.A. 
2015Influence of process parameters on threshold voltage and leakage current in 18nm NMOS deviceAtan, N.B. ; Ahmad, I.B. ; Majlis, B.B.Y. ; Fauzi, I.B.A.