Browsing by Author Kaharudin, K.E.
Showing results 1 to 8 of 8
| Issue Date | Title | Author(s) |
|---|---|---|
| 2016 | Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOS | Kaharudin, K.E. ; Salehuddin, F. ; Zain, A.S.M. ; Aziz, M.N.I.A. ; Ahmad, I. |
| 2018 | Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methods | Roslan, A.F. ; Salehuddin, F. ; M Zain, A.S. ; Mansor, N. ; Kaharudin, K.E. ; Ahmad, I. ; Hazura, H. ; Hanim, A.R. ; Idris, S.K. ; Zaiton, A.M. ; Zarina, B.Z. ; Mohamad, N.R. ; A Hamid, A.M. |
| 2019 | Comparative high-K material gate spacer impact in DG-finfet parameter variations between two structures | Roslan, A.F. ; Salehuddin, F. ; Zain, A.S.M. ; Kaharudin, K.E. ; Ahmad, I. ; Hazura, H. ; Hanim, A.R. ; Idris, S.K. |
| 2016 | Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structure | Kaharudin, K.E. ; Salehuddin, F. ; Soin, N. ; Zain, A.S.M. ; Aziz, M.N.I.A. ; Ahmad, I. |
| 2018 | Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method | Roslan, A.F. ; Kaharudin, K.E. ; Salehuddin, F. ; Zain, A.S.M. ; Ahmad, I. ; Faizah, Z.A.N. ; Hazura, H. ; Hanim, A.R. ; Idris, S.K. ; Zaiton, A.M. ; Mohamad, N.R. ; Hamid, A.M.A. |
| 2016 | Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET Device | Kaharudin, K.E. ; Hamidon, A.H. ; Salehuddin, F. ; Ifwat Abd Aziz, M.N. ; Ahmad, I. |
| 2015 | Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio | Kaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Aziz, M.N.I.A. ; Ahmad, I. |
| 2016 | Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET device | Kaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Zain, A. ; Abd Aziz, M.N.I. ; Ahmad, I. |