Browsing by Author Salehuddin, F.
Showing results 9 to 28 of 31
< previous
next >
| Issue Date | Title | Author(s) |
|---|---|---|
| 2019 | Comparative high-K material gate spacer impact in DG-finfet parameter variations between two structures | Roslan, A.F. ; Salehuddin, F. ; Zain, A.S.M. ; Kaharudin, K.E. ; Ahmad, I. ; Hazura, H. ; Hanim, A.R. ; Idris, S.K. |
| 2017 | Control factors optimization on threshold voltage and leakage current in 22 nm NMOS transistor using Taguchi method | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Salehuddin, F. ; Mohd, A.S. ; Noor, Z.A. ; Elgomati, H.A. |
| 2013 | Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Salehuddin, F. |
| 2012 | Design and optimization of 22nm NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. |
| 2010 | Effect of process parameter variations on threshold voltage in 45nm NMOS device | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. |
| 2016 | Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structure | Kaharudin, K.E. ; Salehuddin, F. ; Soin, N. ; Zain, A.S.M. ; Aziz, M.N.I.A. ; Ahmad, I. |
| 2012 | Impact of different dose and angle in HALO structure for 45nm NMOS device | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. |
| 2010 | Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. |
| 2011 | Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. |
| 2018 | Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method | Roslan, A.F. ; Kaharudin, K.E. ; Salehuddin, F. ; Zain, A.S.M. ; Ahmad, I. ; Faizah, Z.A.N. ; Hazura, H. ; Hanim, A.R. ; Idris, S.K. ; Zaiton, A.M. ; Mohamad, N.R. ; Hamid, A.M.A. |
| 2011 | Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R. |
| 2011 | Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hashim, U. ; Apte, P.R. |
| 2011 | Optimization of process parameter variability in 45 nm PMOS device using Taguchi method | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. |
| 2012 | Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hamid, A.M.A. ; Menon, P.S. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R. |
| 2016 | Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET Device | Kaharudin, K.E. ; Hamidon, A.H. ; Salehuddin, F. ; Ifwat Abd Aziz, M.N. ; Ahmad, I. |
| 2011 | Optimizing 35nm NMOS devices V TH and I LEAK by controlling active area and halo implantation dosage | Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A. |
| 2016 | Process parameter optimisation for minimum leakage current in a 22nm p-type MOSFET using Taguchi method | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Salehuddin, F. ; Mohd Zain, A.S. |
| 2012 | Scaling down of the 32 nm to 22 nm gate length NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. |
| 2011 | Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltage | Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Mohamad, T.Z. ; Apte, P.R. |
| 2014 | Statistical process modelling for 32nm high-K/metal gate PMOS device | Maheran, A.H.A. ; Noor Faizah, Z.A. ; Menon, P.S. ; Ahmad, I. ; Apte, P.R. ; Kalaivani, T. ; Salehuddin, F. |