Browsing by Author Salehuddin, F.


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Showing results 25 to 31 of 31 < previous 
Issue DateTitleAuthor(s)
2016Process parameter optimisation for minimum leakage current in a 22nm p-type MOSFET using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Salehuddin, F. ; Mohd Zain, A.S. 
2012Scaling down of the 32 nm to 22 nm gate length NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. 
2011Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltageElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Mohamad, T.Z. ; Apte, P.R. 
2014Statistical process modelling for 32nm high-K/metal gate PMOS deviceMaheran, A.H.A. ; Noor Faizah, Z.A. ; Menon, P.S. ; Ahmad, I. ; Apte, P.R. ; Kalaivani, T. ; Salehuddin, F. 
2015Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratioKaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Aziz, M.N.I.A. ; Ahmad, I. 
2018Threshold voltage and leakage current variability on process parameter in a 22nm PMOS DeviceAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Noor Faizah, Z.A. ; Mohd Zain, A.S. ; Salehuddin, F. ; Sayed, N.M. 
2016Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET deviceKaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Zain, A. ; Abd Aziz, M.N.I. ; Ahmad, I.