Browsing by Author Elgomati, H.A.


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Showing results 3 to 14 of 14 < previous 
Issue DateTitleAuthor(s)
2010Characterization of fabrication process noises for 32nm NMOS devicesElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Ziad, T. 
2011Cobalt silicide and titanium silicide effects on nano devicesElgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A. 
2017Control factors optimization on threshold voltage and leakage current in 22 nm NMOS transistor using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Salehuddin, F. ; Mohd, A.S. ; Noor, Z.A. ; Elgomati, H.A. 
2013Design and optimization of 22 nm gate length high-k/metal gate NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Salehuddin, F. 
2012Design and optimization of 22nm NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. 
2012Modeling and optimizing of threshold voltage of 32nm NMOS transistor using L18 orthogonal array Taguchi methodElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. 
2012Modelling of process parameters for 32nm PMOS transistor using Taguchi methodElgomati, H.A. ; Majlis, B.Y. ; Hamid, A.M.A. ; Susthitha, P.M. ; Ahmad, I. 
2011Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi methodSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R. 
2012Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal arraySalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hamid, A.M.A. ; Menon, P.S. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R. 
2011Optimizing 35nm NMOS devices V TH and I LEAK by controlling active area and halo implantation dosageElgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A. 
2012Scaling down of the 32 nm to 22 nm gate length NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. 
2011Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltageElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Mohamad, T.Z. ; Apte, P.R.