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Salehuddin, F.

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Issue DateTitleAuthor(s)
12011Application of Taguchi method in the optimization of process variation for 32nm CMOS technologyElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Apte, P.R. 
22019Comparative high-K material gate spacer impact in DG-finfet parameter variations between two structuresRoslan, A.F. ; Salehuddin, F. ; Zain, A.S.M. ; Kaharudin, K.E. ; Ahmad, I. ; Hazura, H. ; Hanim, A.R. ; Idris, S.K. 
32017Control factors optimization on threshold voltage and leakage current in 22 nm NMOS transistor using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Salehuddin, F. ; Mohd, A.S. ; Noor, Z.A. ; Elgomati, H.A. 
42011Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
52011Optimization of input process parameters variation on threshold voltage in 45 nm NMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hashim, U. ; Apte, P.R. 
62011Optimization of process parameter variability in 45 nm PMOS device using Taguchi methodSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
72011Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltageElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Mohamad, T.Z. ; Apte, P.R. 
82018Threshold voltage and leakage current variability on process parameter in a 22nm PMOS DeviceAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Noor Faizah, Z.A. ; Mohd Zain, A.S. ; Salehuddin, F. ; Sayed, N.M. 

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Salehuddin, F.
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