1. DSpaceCRIS@UNITEN

Ahmad, I.B.

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Publications

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Date Issued:  [2010 TO 2020]

Results 1-17 of 17 (Search time: 0.0 seconds).

Issue DateTitleAuthor(s)
12018Analysis the effect of control factors optimization on the threshold voltage of 18 nm PMOS using L27 taguchi methodBte Atanb, N. ; Majlis, B.Y. ; Ahmad, I. ; Chong, K.H. 
22011Application of Taguchi method in the optimization of process variation for 32nm CMOS technologyElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Apte, P.R. 
32019Comparative high-K material gate spacer impact in DG-finfet parameter variations between two structuresRoslan, A.F. ; Salehuddin, F. ; Zain, A.S.M. ; Kaharudin, K.E. ; Ahmad, I. ; Hazura, H. ; Hanim, A.R. ; Idris, S.K. 
42013High performance silicon lateral PIN photodiodeTasirin, S.K. ; Menon, P.S. ; Ahmad, I. ; Abdullah, S.F. 
52018High-k Dielectric Thickness and Halo Implant on Threshold Voltage ControlMah, S.K. ; Ahmad, I. ; Ker, P.J. ; Noor Faizah, Z.A. 
62011Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
72019Influence of optimization of control factors on threshold voltage of 18 nm HfO2/TiSi2 NMOSAtan, N.B. ; Majlis, B.B.Y. ; Ahmad, I.B. ; Chong, K.H. 
82018Mediating role of E- learning resources in developing entrepreneurial inclinations amongst undergraduate students at Universiti Utara MalaysiaRamli, A. ; Shabbir, M.S. ; Bakar, M.S.B. ; Shariff, M.N.M. ; Yusof, M.S. ; Ahmad, I. 
92011Optimization of input process parameters variation on threshold voltage in 45 nm NMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hashim, U. ; Apte, P.R. 
102011Optimization of process parameter variability in 45 nm PMOS device using Taguchi methodSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
112013Optimization of process parameters for Si lateral PIN photodiodeMenon, P.S. ; Kalthom Tasirin, S. ; Ahmad, I. ; Fazlili Abdullah, S. 
122018Optimization of process parameters for threshold voltage and leakage current based on taguchi methodNoor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Menon, P.S. ; Afifah Maheran, A.H. ; Mah, S.K. 
132016Statistical modelling of 14nm n-types MOSFETNoor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Siti Munirah, Y. ; Mohd Firdaus, R. ; Mah, S.K. ; Menon, P.S. 
142011Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltageElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Mohamad, T.Z. ; Apte, P.R. 
152014Study of the effect of WO3 and Bi2O3 on the microstructure and electrical properties of a TiO2 based varistorKothandapani, Z. ; Begum, S. ; Ahmad, I. ; Daud, I.R. ; Gholizadeh, S. 
162013Taguchi optimization of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum wellMenon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Islam, S. ; Abdullah, S.F. 
172018Threshold voltage and leakage current variability on process parameter in a 22nm PMOS DeviceAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Noor Faizah, Z.A. ; Mohd Zain, A.S. ; Salehuddin, F. ; Sayed, N.M. 

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Ahmad, I.B.
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