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Issue DateTitleAuthor(s)
12011Application of Taguchi method in the optimization of process variation for 32nm CMOS technologyElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Apte, P.R. 
22011Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
32011Optimization of input process parameters variation on threshold voltage in 45 nm NMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hashim, U. ; Apte, P.R. 
42011Optimization of process parameter variability in 45 nm PMOS device using Taguchi methodSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
52011Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltageElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Mohamad, T.Z. ; Apte, P.R. 

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Zaharim, A.
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