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dc.contributor.authorSapeli, M.M.I.en_US
dc.contributor.authorFerdaous, M.T.en_US
dc.contributor.authorShahahmadi, S.A.en_US
dc.contributor.authorSopian, K.en_US
dc.contributor.authorChelvanathan, P.en_US
dc.contributor.authorAmin, N.en_US
dc.description.abstractIn this letter, we report the structural and optoelectronic properties of chromium-doped Cu2ZnSnS4 (CZTS:Cr) deposited by co-sputtering technique. Addition of chromium was observed to deteriorate the Cu2ZnSnS4 crystallinity as well as inducing the growth of cubic-ZnCr2S4 secondary phase. Grain size as large as 0.5 µm was observed for the doped sample. Bandgap was found to vary (1.51–1.70 eV), whereas the deep level defect state was calculated to be positioned at 0.20–0.33 eV above the valence band maximum (VBM) depending on the chromium concentration. © 2018
dc.titleEffects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputteringen_US
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