Please use this identifier to cite or link to this item:
http://dspace.uniten.edu.my/jspui/handle/123456789/11623
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chelvanathan, P. | en_US |
dc.contributor.author | Shahahmadi, S.A. | en_US |
dc.contributor.author | Ferdaous, M.T. | en_US |
dc.contributor.author | Sapeli, M.M.I. | en_US |
dc.contributor.author | Sopian, K. | en_US |
dc.contributor.author | Amin, N. | en_US |
dc.date.accessioned | 2019-01-16T23:39:16Z | - |
dc.date.available | 2019-01-16T23:39:16Z | - |
dc.date.issued | 2018 | - |
dc.identifier.uri | http://dspace.uniten.edu.my/jspui/handle/123456789/11623 | - |
dc.description.abstract | In this letter, we report the effects of preferred crystallographic orientation of Mo films on the formation of MoS2 layer through elemental sulphurization process. Vacuum thermal annealing of as-sputtered Mo films results in noticeable change in preferred crystallographic orientation from (1 1 0) to (2 1 1) plane. Correlation between structural and Raman spectroscopy study indicates that Mo film with predominantly (2 1 1) orientation results in pronounced formation of MoS2 compared to the film with the higher degree of (1 1 0) orientation. Planar packing factor, which depends on crystallographic orientation is proposed to play a crucial role in determining the degree of MoS2 formation. © 2018 Elsevier B.V. | |
dc.language.iso | en | en_US |
dc.title | Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film | en_US |
dc.type | Article | en_US |
item.fulltext | No Fulltext | - |
item.grantfulltext | none | - |
Appears in Collections: | UNITEN Scholarly Publication |
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