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dc.contributor.authorMaheran, A.H.A.
dc.contributor.authorMenon, P.S.
dc.contributor.authorShaari, S.
dc.contributor.authorAhmad, I.
dc.contributor.authorFaizah, Z.A.N.
dc.description.abstractThis paper aims to study the effect of process parameter variation on a nano-scaled planar p-type MOSFET (metal-oxide-semiconductor field-effect transistor) device for 22 nm technology using Taguchi's L9 orthogonal array. The device was constructed with high-k/metal gate consisting of Titanium dioxide (TiO2) and Tungsten silicide (WSix) metal gate using an industrial-based numerical simulator. Using Taguchi's Signal-to-noise ratio (SNR) of nominal-the-best (NTB), the compensation implantation has been as identified as the dominant factor influencing the Vth value with 67.77% while the Halo implantation tilting angle has been identified as the adjustment factor. Upon optimization, the Vth value is-0.29538 V which is within the requirements of the International Technology Roadmap for Semiconductors (ITRS) 2012 which is-0.289 V ± 12.7 %. © 2015 IEEE.
dc.titleStatistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method
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