Please use this identifier to cite or link to this item:
http://dspace.uniten.edu.my/jspui/handle/123456789/5218| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Tasirin, S.K. | en_US |
| dc.contributor.author | Menon, P.S. | en_US |
| dc.contributor.author | Ahmad, I. | en_US |
| dc.contributor.author | Abdullah, S.F. | en_US |
| dc.date.accessioned | 2017-11-15T02:56:42Z | - |
| dc.date.available | 2017-11-15T02:56:42Z | - |
| dc.date.issued | 2013 | - |
| dc.description.abstract | Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode. © Published under licence by IOP Publishing Ltd. | |
| dc.language.iso | en | en_US |
| dc.title | High performance silicon lateral PIN photodiode | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1088/1755-1315/16/1/012032 | - |
| item.fulltext | No Fulltext | - |
| item.grantfulltext | none | - |
| Appears in Collections: | COE Scholarly Publication | |
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