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dc.contributor.authorFazrena Azlee bte. Hamid, Dr.en_US
dc.contributor.authorKhairul Anwar Syahmi Che Ismailen_US
dc.contributor.authorJulius Teo Han Loongen_US
dc.descriptionVolume :0, Issue No :0, Article ID :978-1-5090-2888-7/16, Page Start :462, Page End :467, ISSN :978-1-5090-2888-7/16en_US
dc.description.abstractThe memristor is the fourth fundamental passive circuit element, whereby it can remember the resistance based on the last applied voltage. Hence, the name “memory resistor”. Three memristor window functions introduced prior to this paper were taken into discussion where the memristor is inserted into the memristor-based RO-PUF. This was done in order to investigate the effect of having different memristor window functions on the RO-PUF performance in terms of uniqueness, uniformity, and bitaliasing. While the RO-PUF produces satisfactory results individually, the effect of using different memristor window functions on the RO-PUF performance is not significant. There was little effect because the memristor linearity becomes more prominent with increasing frequency. With that, the memristor acted like a resistor at the high operating frequency of the ROPUF. Nevertheless, the randomized parameter of initial resistance provided the RO-PUF improved performance. Thus, the RO-PUF performed as expected and is stable regardless of the memristor window function used.en_US
dc.subjectPhysically Unclonable Function (RO-PUF)en_US
dc.titleEffect of different memristor window function with variable random resistance on the performance of memristor-based ro-pufen_US
dc.typeConference Proceedingen_US
dc.relation.conference2016 International Conference on Advances in Electrical, Electronic and System Engineering (ICAEESE 2016)en_US
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