Please use this identifier to cite or link to this item:
http://dspace.uniten.edu.my/jspui/handle/123456789/5337
DC Field | Value | Language |
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dc.contributor.author | Omar, A. | |
dc.contributor.author | Ahmad, I. | |
dc.contributor.author | Alias, A.J. | |
dc.date.accessioned | 2017-11-15T02:57:36Z | - |
dc.date.available | 2017-11-15T02:57:36Z | - |
dc.date.issued | 2000 | |
dc.identifier.uri | http://dspace.uniten.edu.my:80/jspui/handle/123456789/5337 | - |
dc.description.abstract | The effect of phosphorus, doped by in-situ and by ion implantation on poly silicon, as a gate electrode of 0.5 μm CMOS was investigated. The result shows that a two-step annealing is required to cure the radiation damage and activate the dopant in reducing the sheet resistance of the ion implanted gate electrode. The introduction of phosphorus from 7×10 15 to 3×l0 l6/cm 3 by ion implantation at 40 keV has reduced the sheet resistance from 100 ohm/ to 25 ohm/ comparable to the gate produced by in-situ phosphorus doping. The microstructures of polysilicon gate electrode were studied using TEM. and found that grains of samples in polysilicon doped by in-situ are larger than other samples. © 2000 IEEE. | |
dc.title | Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices | |
item.fulltext | No Fulltext | - |
item.grantfulltext | none | - |
Appears in Collections: | COE Scholarly Publication |
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