1. DSpaceCRIS@UNITEN
  2. College of Engineering
  3. COE Scholarly Publication
Please use this identifier to cite or link to this item: http://dspace.uniten.edu.my/jspui/handle/123456789/5339
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dc.contributor.authorHashim, Uda
dc.contributor.authorShaari, Abu Hassan
dc.contributor.authorAhmad, Ibrahim
dc.contributor.authorShaari, Sahbudin
dc.contributor.authorMajlis, Burhanudin Yeop
dc.date.accessioned2017-11-15T02:57:37Z-
dc.date.available2017-11-15T02:57:37Z-
dc.date.issued1998
dc.identifier.urihttp://dspace.uniten.edu.my:80/jspui/handle/123456789/5339-
dc.description.abstractThe statistical design of experiment technique was used to study the influence of junction formation process variables on the diffusion sheet resistance. Two-level screening experiment with 23 factorial design was used to evaluate three process variables in eight combination runs. The factors were implementation dose of BF2 and Ar, drive-in temperature and drive-in time. The analysis of variance used to analyze the data shows that all main variables are important for arsenic implanted wafer and only drive-in temperature factor is important for boron implanted wafer.
dc.titleInfluence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology
item.fulltextNo Fulltext-
item.grantfulltextnone-
Appears in Collections:COE Scholarly Publication
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