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http://dspace.uniten.edu.my/jspui/handle/123456789/5665| Title: | Active-matrix GaN micro light-emitting diode display with unprecedented brightness | Authors: | Herrnsdorf, J. McKendry, J.J.D. Zhang, S. Xie, E. Ferreira, R. Massoubre, D. Zuhdi, A.M. Henderson, R.K. Underwood, I. Watson, S. Kelly, A.E. Gu, E. Dawson, M.D. |
Issue Date: | 2015 | Journal: | IEEE Transactions on Electron Devices Volume 62, Issue 6, 1 June 2015, Article number 7084141, Pages 1918-1925 | Abstract: | Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2. © 1963-2012 IEEE. | DOI: | 10.1109/TED.2015.2416915 |
| Appears in Collections: | COE Scholarly Publication |
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