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dc.contributor.authorYap, B.K.en_US
dc.contributor.authorKoh, S.P.en_US
dc.contributor.authorTiong, S.K.en_US
dc.contributor.authorOng, C.N.en_US
dc.description.abstractIt is not an easy task to probe the mobility of nanoscale thin layers without using expensive and sophisticated equipments such as Time-of-flight photocurrent charge carrier mobility measurement. We present here a powerful yet cost-effective technique, namely the Space-Charge-Limited Dark Injection (SCL DI) Transient Measurement that allows us to confirm an ohmic injecting interface, to determine the mobility values of the bulk materials and to study the injection efficiency of the interfaces of the semiconductor materials. © 2010 IEEE.en_US
dc.relation.ispartofIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE 2010, Article number 5549542, Pages 192-194en_US
dc.titleSpace-Charge-Limited Dark Injection (SCL DI) transient measurementsen_US
dc.typeConference Paperen_US
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