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http://dspace.uniten.edu.my/jspui/handle/123456789/5987| Title: | InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product | Authors: | Ker, P.J. Marshall, A.R.J. Krysa, A.B. David, J.P.R. Tan, C.H. |
Issue Date: | 2012 | Journal: | InAs avalanche photodiodes for X-ray detection. In 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 (pp. 2071-2073). [6154421] Institute of Electrical and Electronics Engineers Inc. | Abstract: | InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively. © 2012 IEEE. | DOI: | 10.1109/NSSMIC.2011.6154421 |
| Appears in Collections: | COE Scholarly Publication |
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