Please use this identifier to cite or link to this item:
http://dspace.uniten.edu.my/jspui/handle/123456789/5990| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ker, P.J. | en_US |
| dc.contributor.author | Marshall, A. | en_US |
| dc.contributor.author | Gomes, R. | en_US |
| dc.contributor.author | David, J.P. | en_US |
| dc.contributor.author | Ng, J.S. | en_US |
| dc.contributor.author | Tan, C.H. | en_US |
| dc.date.accessioned | 2017-12-08T07:48:16Z | - |
| dc.date.available | 2017-12-08T07:48:16Z | - |
| dc.date.issued | 2011 | - |
| dc.description.abstract | Avalanche gain and excess noise characteristics of InAs APDs showed that high gain can be achieved with excess noise factor F∼1.5 across temperatures ranging from 77 to 298K. © 2011 IEEE. | en_US |
| dc.language.iso | en_US | en_US |
| dc.relation.ispartof | InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. In IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp. 276-277). [6110533] | en_US |
| dc.title | InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes | en_US |
| dc.type | Conference Proceeding | en_US |
| dc.identifier.doi | 10.1109/PHO.2011.6110533 | - |
| item.fulltext | No Fulltext | - |
| item.grantfulltext | none | - |
| Appears in Collections: | COE Scholarly Publication | |
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