Please use this identifier to cite or link to this item:
|Title:||Space-Charge-Limited Dark Injection (SCL DI) transient measurements||Authors:||Yap, B.K.
|Issue Date:||2010||Abstract:||It is not an easy task to probe the mobility of nanoscale thin layers without using expensive and sophisticated equipments such as Time-of-flight photocurrent charge carrier mobility measurement. We present here a powerful yet cost-effective technique, namely the Space-Charge-Limited Dark Injection (SCL DI) Transient Measurement that allows us to confirm an ohmic injecting interface, to determine the mobility values of the bulk materials and to study the injection efficiency of the interfaces of the semiconductor materials. © 2010 IEEE.||URI:||http://dspace.uniten.edu.my/jspui/handle/123456789/8811|
|Appears in Collections:||COE Scholarly Publication|
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.