Browsing by Author Ahmad, I.


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Issue DateTitleAuthor(s)
2014Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array methodSalehuddin, F. ; Mohd Zain, A.S. ; Idris, N.M. ; Mat Yamin, A.K. ; Abdul Hamid, A.M. ; Ahmad, I. ; Menon, P.S. 
2016Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOSKaharudin, K.E. ; Salehuddin, F. ; Zain, A.S.M. ; Aziz, M.N.I.A. ; Ahmad, I. 
2017Control factors optimization on threshold voltage and leakage current in 22 nm NMOS transistor using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Salehuddin, F. ; Mohd, A.S. ; Noor, Z.A. ; Elgomati, H.A. 
2015Determination of impact damage severity level in Sheet Molding Compound composite material using thermography method - A preliminary studyMohamed, A.A. ; Disele, T.L. ; Ahmad, I. ; Mohd, S. 
2015Development of process parameters for 22 nm PMOS using 2-D analytical modelingMaheran, A.H.A. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Faizah, Z.A.N. 
1998Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafersOmar, Abdullah b. ; Ahmad, Ibrahim b. ; Ahmad, I. 
2014Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
2016Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structureKaharudin, K.E. ; Salehuddin, F. ; Soin, N. ; Zain, A.S.M. ; Aziz, M.N.I.A. ; Ahmad, I. 
2017Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germaniumSahari, S.K. ; Kashif, M. ; Sutan, N.M. ; Embong, Z. ; Nik Zaini Fathi, N.A.F. ; Hamzah, A.A. ; Sapawi, R. ; Majlis, B.Y. ; Ahmad, I. 
2016Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOSAtan, N. ; Ahmad, I. ; Majlis, B.Y. ; Azle, M.F. 
2016Modeling and simulation of InAs photodiode on electric field profile and dark current characteristicsRoslan, P.S.A. ; Ker, P.J. ; Ahmad, I. ; Pasupuleti, J. ; Fam, P.Z. 
2015Modeling of 14 nm gate length n-Type MOSFETFaizah, Z.A.N. ; Ahmad, I. ; Ker, P.J. ; Roslan, P.S.A. ; Maheran, A.H.A. 
2014Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
2014Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
2016Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET DeviceKaharudin, K.E. ; Hamidon, A.H. ; Salehuddin, F. ; Ifwat Abd Aziz, M.N. ; Ahmad, I. 
2017Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate lengthAbidin, N.F.Z. ; Ahmad, I. ; Ker, P.J. ; Menon, P.S. 
2017Performance of nickel-based oxygen carrier produced using renewable fuel aloe veraAfandi, N.F. ; Devaraj, D. ; Manap, A. ; Ibrahim, N. ; Ahmad, I. 
2016Process parameter optimisation for minimum leakage current in a 22nm p-type MOSFET using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Salehuddin, F. ; Mohd Zain, A.S. 
2016Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical ModellingNoor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Siti Munirah, Y. ; Mohd Firdaus, R. ; Md Fazle, E. ; Menon, P.S. 
2016Process parameters optimization of 14nm p-type MOSFET using 2-D analytical modelingNoor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Siti Munirah, Y. ; Mohd Firdaus, R. ; Mah, S.K. ; Menon, P.S.