Browsing by Author Hamid, F.A.

Showing results 1 to 19 of 19
Issue DateTitleAuthor(s)
2009Analysis of programme outcomes achievement for electrical engineering programmes in UNITENAmirulddin, U.A.U. ; Osman, M. ; Hamid, F.A. 
2010Analyze and optimize the silicide thickness in 45nm CMOS technology using Taguchi methodSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
2011Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFETSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y. 
2011Application of Taguchi method in the optimization of process variation for 32nm CMOS technologyElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Apte, P.R. 
2010Characterization and optimizations of silicide thickness in 45nm pMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
2011Cobalt silicide and titanium silicide effects on nano devicesElgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A. 
2017Development of technical skills in Electrical Power Engineering students: A case study of Power Electronics as a Key CourseHussain, I.S. ; Hamid, F.A. 
2010Effect of process parameter variations on threshold voltage in 45nm NMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
2012Impact of different dose and angle in HALO structure for 45nm NMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
2010Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
2017The Implementation of key course concept in the evaluation of BEEE programme in UNITENNordin, F.H. ; Hamid, F.A. 
2011Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
2011Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi methodSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R. 
2011Optimization of input process parameters variation on threshold voltage in 45 nm NMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hashim, U. ; Apte, P.R. 
2011Optimization of process parameter variability in 45 nm PMOS device using Taguchi methodSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
2012Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal arraySalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hamid, A.M.A. ; Menon, P.S. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R. 
2011Optimizing 35nm NMOS devices V TH and I LEAK by controlling active area and halo implantation dosageElgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A. 
2011Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltageElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Mohamad, T.Z. ; Apte, P.R. 
2012Tunable loop filter in fractional-N frequency synthesizer for wireless applicationsKit, G.L. ; Hamid, F.A. ; Ahmed, S.K.