Browsing by Author

Showing results 1 to 19 of 19
Issue DateTitleAuthor(s)
2006A study on inter-metallic compound formation and structure of lead free SnAgCu solder systemAhmad, I. ; Jiun, H.H. ; Leng, E.P. ; Majlis, B.Y. ; Jalar, A. ; Wagiran, R. 
2010Characterization of fabrication process noises for 32nm NMOS devicesElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Ziad, T. 
2004Deflection analysis of epitaxially deposited polysilicon encapsulation for MEMS devicesHamzah, A.A. ; Majlis, B.Y. ; Ahmad, I. 
2012Design and optimization of 22nm NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. 
2006Effect of reflow profile (RSP Vs RTP) On Su/3.8Ag/0.7Cu solder joint strengthEu, P.-L. ; Ahmad, I. ; Jalar, A. ; Kamarudin, H. ; Majlis, B.Y. 
2006Fabrication of platinum membrane on silicon for MEMS microphoneHamzah, A.A. ; Majlis, B.Y. ; Ahmad, I. 
2006Formation of thick spin-on glass (SOG) sacrificial layer for capacitive accelerometer encapsulationHamzah, A.A. ; Majlis, B.Y. ; Ahmad, I. 
2007HF etching of sacrificial spin-on glass in straight and junctioned microchannels for MEMS microstructure releaseHamzah, A.A. ; Majlis, B.Y. ; Ahmad, I. 
2016Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOSAtan, N. ; Ahmad, I. ; Majlis, B.Y. ; Azle, M.F. 
2012Modeling and optimizing of threshold voltage of 32nm NMOS transistor using L18 orthogonal array Taguchi methodElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. 
2012Modelling of process parameters for 32nm PMOS transistor using Taguchi methodElgomati, H.A. ; Majlis, B.Y. ; Hamid, A.M.A. ; Susthitha, P.M. ; Ahmad, I. 
2006Modelling of sacrificial spin-on glass (SOG) etching in non-straight microchannels using hydrofluoric acidHamzah, A.A. ; Majlis, B.Y. ; Ahmad, I. 
2011Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi methodSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R. 
2007Optimization of nickel thickness on substrate for TBGA using SAC387 solder materialAhmad, I. ; Majlis, B.Y. ; Jalar, A. ; Leng, E.P. 
2012Scaling down of the 32 nm to 22 nm gate length NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. 
2008Selection of high strength encapsulant for MEMS devices undergoing high-pressure packagingHamzah, A.A. ; Husaini, Y. ; Majlis, B.Y. ; Ahmad, I. 
2006Solder joint strength of lead free solders under multiple reflow and high temperature storage conditionAhmad, I. ; Jalar, A. ; Majlis, B.Y. ; Leng, E.P. ; San, Y.S. 
2008Sputtered encapsulation as wafer level packaging for isolatable MEMS devices: A technique demonstrated on a capacitive accelerometerHamzah, A.A. ; Yunas, J. ; Majlis, B.Y. ; Ahmad, I. 
2009Statistical design of ultra-thin SiO2 for nanodevicesHashim, U. ; Abdul Fatah, M.F.A. ; Ahmad, I. ; Majlis, B.Y.