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Issue Date | Title | Author(s) |
---|---|---|
2012 | Scaling down of the 32 nm to 22 nm gate length NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. |
2008 | Selection of high strength encapsulant for MEMS devices undergoing high-pressure packaging | Hamzah, A.A. ; Husaini, Y. ; Majlis, B.Y. ; Ahmad, I. |
2006 | Solder joint strength of lead free solders under multiple reflow and high temperature storage condition | Ahmad, I. ; Jalar, A. ; Majlis, B.Y. ; Leng, E.P. ; San, Y.S. |
2008 | Sputtered encapsulation as wafer level packaging for isolatable MEMS devices: A technique demonstrated on a capacitive accelerometer | Hamzah, A.A. ; Yunas, J. ; Majlis, B.Y. ; Ahmad, I. |
2009 | Statistical design of ultra-thin SiO2 for nanodevices | Hashim, U. ; Abdul Fatah, M.F.A. ; Ahmad, I. ; Majlis, B.Y. |