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Issue Date	Title	Author(s)
2012	Scaling down of the 32 nm to 22 nm gate length NMOS transistor	Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F.
2008	Selection of high strength encapsulant for MEMS devices undergoing high-pressure packaging	Hamzah, A.A. ; Husaini, Y. ; Majlis, B.Y. ; Ahmad, I.
2006	Solder joint strength of lead free solders under multiple reflow and high temperature storage condition	Ahmad, I. ; Jalar, A. ; Majlis, B.Y. ; Leng, E.P. ; San, Y.S.
2008	Sputtered encapsulation as wafer level packaging for isolatable MEMS devices: A technique demonstrated on a capacitive accelerometer	Hamzah, A.A. ; Yunas, J. ; Majlis, B.Y. ; Ahmad, I.
2009	Statistical design of ultra-thin SiO2 for nanodevices	Hashim, U. ; Abdul Fatah, M.F.A. ; Ahmad, I. ; Majlis, B.Y.

Showing results 15 to 19 of 19 < previous