1. DSpaceCRIS@UNITEN
  2. Research Outputs

Browsing by Author Menon, P.S.


Or, select a letter below to browse by last name
0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Showing results 1 to 20 of 30  next >
Issue DateTitleAuthor(s)
2014Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array methodSalehuddin, F. ; Mohd Zain, A.S. ; Idris, N.M. ; Mat Yamin, A.K. ; Abdul Hamid, A.M. ; Ahmad, I. ; Menon, P.S. 
2014Application of Taguchi method in designing a 22nm high-k/metal gate NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
2017Control factors optimization on threshold voltage and leakage current in 22 nm NMOS transistor using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Salehuddin, F. ; Mohd, A.S. ; Noor, Z.A. ; Elgomati, H.A. 
2013Design and optimization of 22 nm gate length high-k/metal gate NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Salehuddin, F. 
2012Design and optimization of 22nm NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. 
2015Development of process parameters for 22 nm PMOS using 2-D analytical modelingMaheran, A.H.A. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Faizah, Z.A.N. 
2014Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
2014Effect of process parameter variability on the threshold voltage of downscaled 22nm PMOS using taguchi methodMaheran, A.H.A. ; Menon, P.S. ; Shaari, S. ; Kalaivani, T. ; Ahmad, I. ; Faizah, Z.A.N. ; Apte, P.R. 
2012High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum wellMenon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Abdullah, S.F. 
2013High performance silicon lateral PIN photodiodeTasirin, S.K. ; Menon, P.S. ; Ahmad, I. ; Abdullah, S.F. 
2014Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
2012Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal arraySalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hamid, A.M.A. ; Menon, P.S. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R. 
2013Optimization of process parameters for Si lateral PIN photodiodeMenon, P.S. ; Kalthom Tasirin, S. ; Ahmad, I. ; Fazlili Abdullah, S. 
2018Optimization of process parameters for threshold voltage and leakage current based on taguchi methodNoor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Menon, P.S. ; Afifah Maheran, A.H. ; Mah, S.K. 
2017Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate lengthAbidin, N.F.Z. ; Ahmad, I. ; Ker, P.J. ; Menon, P.S. 
2016Process parameter optimisation for minimum leakage current in a 22nm p-type MOSFET using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Salehuddin, F. ; Mohd Zain, A.S. 
2016Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical ModellingNoor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Siti Munirah, Y. ; Mohd Firdaus, R. ; Md Fazle, E. ; Menon, P.S. 
2016Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical ModellingNoor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Siti Munirah, Y. ; Mohd Firdaus, R. ; Md Fazle, E. ; Menon, P.S. 
2016Process parameters optimization of 14nm p-type MOSFET using 2-D analytical modelingNoor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Siti Munirah, Y. ; Mohd Firdaus, R. ; Mah, S.K. ; Menon, P.S. 
2013Responsivity optimization of a MQW SOI-based lateral PIN photodiode using Taguchi's L27 orthogonal arrayMenon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Abdullah, S.F. ; Apte, P.R. 
Showing results 1 to 20 of 30  next >