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Issue Date	Title	Author(s)
2012	Scaling down of the 32 nm to 22 nm gate length NMOS transistor	Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F.
2011	Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltage	Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Mohamad, T.Z. ; Apte, P.R.
2014	Statistical process modelling for 32nm high-K/metal gate PMOS device	Maheran, A.H.A. ; Noor Faizah, Z.A. ; Menon, P.S. ; Ahmad, I. ; Apte, P.R. ; Kalaivani, T. ; Salehuddin, F.
2015	Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio	Kaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Aziz, M.N.I.A. ; Ahmad, I.
2018	Threshold voltage and leakage current variability on process parameter in a 22nm PMOS Device	Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Noor Faizah, Z.A. ; Mohd Zain, A.S. ; Salehuddin, F. ; Sayed, N.M.
2016	Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET device	Kaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Zain, A. ; Abd Aziz, M.N.I. ; Ahmad, I.

Showing results 26 to 31 of 31 < previous