Browsing by Author Ahmad, I.B.


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Issue DateTitleAuthor(s)
2008An efficient first order sigma delta modulator designAmin, N. ; Guan, G.C. ; Ahmad, I. 
2008An experimental study of defect determination using pulsed thermal non-destructive testingUmar, M.Z. ; Ahmad, I. ; Hamzah, A.R. ; Abdullah, W.S.W. 
2018Analysis the effect of control factors optimization on the threshold voltage of 18 nm PMOS using L27 taguchi methodBte Atanb, N. ; Majlis, B.Y. ; Ahmad, I. ; Chong, K.H. 
2010Analyze and optimize the silicide thickness in 45nm CMOS technology using Taguchi methodSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
2011Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFETSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y. 
2014Application of Taguchi method in designing a 22nm high-k/metal gate NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
2011Application of Taguchi method in the optimization of process variation for 32nm CMOS technologyElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Apte, P.R. 
2009BGA lead-free C5 solder system improvement by germanium addition to Sn3.5Ag and Sn-3.8Ag-0.7Cu solder alloyLeng, E.P. ; Ling, W.T. ; Amin, N. ; Ahmad, I. ; Han, T.Y. ; Chiao, C.W. ; Haseeb, A.S.M.A. 
2002Characterisation of polysilicon gate microstructures for 0.5 μm CMOS devices using transmission electron microscopy and atomic force microscopy imagesAhmad, I. ; Omar, A. ; Hussain, A. ; Mikdad, A. 
2010Characterization and optimizations of silicide thickness in 45nm pMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
2010Characterization of a submicron PMOS in mixer circuitsYeap, K.H. ; Ahmad, I. ; Rizman, Z.I. ; Chew, K. ; Chong, K.H. ; Yong, Y.T. 
2010Characterization of fabrication process noises for 32nm NMOS devicesElgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Ziad, T. 
2008Characterization of nickel plated copper heat spreaders with different catalytic activation processes for flip-chip ball grid array packageLim, V. ; Ahmad, I. ; Seng, F.C. ; Amin, N. ; Rasid, R. 
2007Characterization of parasitic residual deposition on passivation layer in electroless nickel immersion gold processMd Arshad, M.K. ; Jalar, A. ; Ahmad, I. 
2011Cobalt silicide and titanium silicide effects on nano devicesElgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A. 
2018Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical MethodsRoslan, A.F. ; Salehuddin, F. ; M Zain, A.S. ; Mansor, N. ; Kaharudin, K.E. ; Ahmad, I. ; Hazura, H. ; Hanim, A.R. ; Idris, S.K. ; Zaiton, A.M. ; Zarina, B.Z. ; Mohamad, N.R. ; A Hamid, A.M. 
2019Comparative high-K material gate spacer impact in DG-finfet parameter variations between two structuresRoslan, A.F. ; Salehuddin, F. ; Zain, A.S.M. ; Kaharudin, K.E. ; Ahmad, I. ; Hazura, H. ; Hanim, A.R. ; Idris, S.K. 
2004Deflection analysis of epitaxially deposited polysilicon encapsulation for MEMS devicesHamzah, A.A. ; Majlis, B.Y. ; Ahmad, I. 
2013Design and optimization of 22 nm gate length high-k/metal gate NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Salehuddin, F. 
2012Design and optimization of 22nm NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F.