Showing results 52 to 71 of 141
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Issue Date | Title | Author(s) |
2003 | Electrical testing for MEMS's piezoresistive pressure sensor | Abd Wahab, M.Z.B. ; Sauli, Z.B. ; Ahmad, I. ; Suradi, W.B. |
2007 | Evaluation of different die attach film and epoxy pastes for stacked die QFN package | Ahmad, I. ; Bachok, N.N. ; Chiang, N.C. ; Talib, M.Z.M. ; Rosle, M.F. ; Latip, F.L.A. ; Aziz, Z.A. |
2006 | Fabrication of platinum membrane on silicon for MEMS microphone | Hamzah, A.A. ; Majlis, B.Y. ; Ahmad, I. |
2008 | FCPBGA with SOP pad finishing a study of lead-free solder ball attach improvement | Leng, E.P. ; Ling, W.T. ; Amin, N. ; Ahmad, I. |
2006 | Formation of thick spin-on glass (SOG) sacrificial layer for capacitive accelerometer encapsulation | Hamzah, A.A. ; Majlis, B.Y. ; Ahmad, I. |
2007 | HF etching of sacrificial spin-on glass in straight and junctioned microchannels for MEMS microstructure release | Hamzah, A.A. ; Majlis, B.Y. ; Ahmad, I. |
2012 | High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well | Menon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Abdullah, S.F. |
2013 | High performance silicon lateral PIN photodiode | Tasirin, S.K. ; Menon, P.S. ; Ahmad, I. ; Abdullah, S.F. |
2018 | High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control | Mah, S.K. ; Ahmad, I. ; Ker, P.J. ; Noor Faizah, Z.A. |
2012 | Impact of different dose and angle in HALO structure for 45nm NMOS device | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. |
2010 | Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. |
2006 | Impact of low-k devices on failure mode of flip chip tensile pull test | Endut, Z. ; Ahmad, I. ; Swee, G.L.H. ; Sukemi, N.M. |
2008 | Improved series resistance model for CMOS ESD diodes | Kamal, N.B. ; Kordesch, A.V. ; Ahmad, I.B. |
2011 | Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device | Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. |
2019 | Influence of optimization of control factors on threshold voltage of 18 nm HfO2/TiSi2 NMOS | Atan, N.B. ; Majlis, B.B.Y. ; Ahmad, I.B. ; Chong, K.H. |
2015 | Influence of process parameters on threshold voltage and leakage current in 18nm NMOS device | Atan, N.B. ; Ahmad, I.B. ; Majlis, B.B.Y. ; Fauzi, I.B.A. |
2008 | Intermetallic growth of Sn-Ag-Sb/Ni plated Cu in power packaging subject to thermal aging | Shualdi, W. ; Ahmad, I. ; Omar, G. ; Isnin, A. |
2007 | Investigation of Sn3.5Ag and Sn3.8Ag0.7Cu Pb-free Alloys for BGA application on Ni/Au Finish | Eu, P.-L. ; Ding, M. ; Ahmad, I. |
2018 | Jsc and Voc optimization of perovskite solar cell with interface defect layer using taguchi method | Bahrudin, M.S. ; Abdullah, S.F. ; Ahmad, I. ; Zuhdi, A.W.M. ; Hasani, A.H. ; Za'Abar, F. ; Malik, M. ; Harif, M.N. |
2006 | Lead-free flux effect in lead-free solder joint improvement | Eu, P.L. ; Ding, M. ; Ahmad, I. ; Hoh, H.J. ; Hazlinda, K. |