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Kaharudin, K.E.

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Publications


Results 1-5 of 5 (Search time: 0.0 seconds).

Issue DateTitleAuthor(s)
12016Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET deviceKaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Zain, A. ; Abd Aziz, M.N.I. ; Ahmad, I. 
22015Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratioKaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Aziz, M.N.I.A. ; Ahmad, I. 
32016Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET DeviceKaharudin, K.E. ; Hamidon, A.H. ; Salehuddin, F. ; Ifwat Abd Aziz, M.N. ; Ahmad, I. 
42016Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structureKaharudin, K.E. ; Salehuddin, F. ; Soin, N. ; Zain, A.S.M. ; Aziz, M.N.I.A. ; Ahmad, I. 
52016Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOSKaharudin, K.E. ; Salehuddin, F. ; Zain, A.S.M. ; Aziz, M.N.I.A. ; Ahmad, I. 

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Kaharudin, K.E.
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