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Author:  Afifah Maheran, A.H.

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Issue DateTitleAuthor(s)
12014Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
22014Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
32012Design and optimization of 22nm NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. 
42013Design and optimization of 22 nm gate length high-k/metal gate NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Salehuddin, F. 
52014Application of Taguchi method in designing a 22nm high-k/metal gate NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 

Full Name
Shaari, S.
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