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Fauzi, I.B.A.

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Author:  Majlis, B.B.Y.

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Issue DateTitleAuthor(s)
12015Influence of process parameters on threshold voltage and leakage current in 18nm NMOS deviceAtan, N.B. ; Ahmad, I.B. ; Majlis, B.B.Y. ; Fauzi, I.B.A. 

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Fauzi, I.B.A.
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