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Majlis, B.Y.
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| Issue Date | Title | Author(s) | |
|---|---|---|---|
| 1 | 2011 | Application of Taguchi method in the optimization of process variation for 32nm CMOS technology | Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Apte, P.R. |
| 2 | 2017 | Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium | Sahari, S.K. ; Kashif, M. ; Sutan, N.M. ; Embong, Z. ; Nik Zaini Fathi, N.A.F. ; Hamzah, A.A. ; Sapawi, R. ; Majlis, B.Y. ; Ahmad, I. |
| 3 | 2011 | Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltage | Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Mohamad, T.Z. ; Apte, P.R. |
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Majlis, B.Y.
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