Please use this identifier to cite or link to this item:
|Title:||Process characterization of 32nm semi analytical bilayer graphene-based mosfet||Authors:||Ibrahim bin Ahmad, Prof. Dr
Ker Pin Jern, Mr.
Noor Faizah Zainal Abidin
P. Susthitha Menon N V Visvanathan
|Issue Date:||Oct-2016||Journal:||Matec Web Of Conferences||Abstract:||This paper presents an inclusive study and analysis of graphene-based MOSFET device at 32nm gate length. The analysis was based on top-gated structure which utilized Hafnium Dioxide (HfO2) dielectrics and metal gate. The same conventional process flows of a transistor were applied except the deposition of bilayer graphene as a channel. The analytical expression of the channel potential includes all relevant physics of bilayer graphene and by assuming that this device displays an ideal ohmic contact and functioned at a ballistic transport. Based on the designed transistor, the on-state current (ION) for both GNMOS and GPMOS shows a promising performance where the value is 982.857uA/um and 99.501uA/um respectively. The devices also possess a very small leakage current (IOFF) of 0.289578nA/um for GNMOS and 0.130034nA/um for GPMOS as compared to the conventional SiO2/Poly-Si and high-k metal gate transistors. However, the devices suffer an inappropriate subthreshold swing (SS) and high value of drain induced barrier lowering (DIBL).||Description:||Volume :78, Issue No :-, Article ID :20167801016, Page Start :1, Page End :7, ISSN :-||URI:||http://dspace.uniten.edu.my:8080/jspui/handle/123456789/49|
|Appears in Collections:||CSIT Scholarly Publication|
Show full item record
Files in This Item:
|2016_Faizah_Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET_ICONGDM.pdf||252.41 kB||Adobe PDF||View/Open Request a copy|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.