Please use this identifier to cite or link to this item: http://dspace.uniten.edu.my/jspui/handle/123456789/52
Title: Effect of different memristor window function with variable random resistance on the performance of memristor-based ro-puf
Authors: Fazrena Azlee bte. Hamid, Dr. 
Khairul Anwar Syahmi Che Ismail 
Julius Teo Han Loong 
Keywords: Memristor
Physically Unclonable Function (RO-PUF)
Issue Date: Nov-2016
Conference: 2016 International Conference on Advances in Electrical, Electronic and System Engineering (ICAEESE 2016) 
Abstract: The memristor is the fourth fundamental passive circuit element, whereby it can remember the resistance based on the last applied voltage. Hence, the name “memory resistor”. Three memristor window functions introduced prior to this paper were taken into discussion where the memristor is inserted into the memristor-based RO-PUF. This was done in order to investigate the effect of having different memristor window functions on the RO-PUF performance in terms of uniqueness, uniformity, and bitaliasing. While the RO-PUF produces satisfactory results individually, the effect of using different memristor window functions on the RO-PUF performance is not significant. There was little effect because the memristor linearity becomes more prominent with increasing frequency. With that, the memristor acted like a resistor at the high operating frequency of the ROPUF. Nevertheless, the randomized parameter of initial resistance provided the RO-PUF improved performance. Thus, the RO-PUF performed as expected and is stable regardless of the memristor window function used.
Description: Volume :0, Issue No :0, Article ID :978-1-5090-2888-7/16, Page Start :462, Page End :467, ISSN :978-1-5090-2888-7/16
URI: http://dspace.uniten.edu.my:80/jspui/handle/123456789/52
DOI: 10.1109/ICAEES.2016.7888086
Appears in Collections:COE Scholarly Publication

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