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dc.contributor.authorTasirin, S.K.en_US
dc.contributor.authorMenon, P.S.en_US
dc.contributor.authorAhmad, I.en_US
dc.contributor.authorAbdullah, S.F.en_US
dc.description.abstractStart Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode. © Published under licence by IOP Publishing Ltd.
dc.titleHigh performance silicon lateral PIN photodiodeen_US
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Appears in Collections:COE Scholarly Publication
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