Please use this identifier to cite or link to this item:
|Title:||Electrical testing for MEMS's piezoresistive pressure sensor||Authors:||Abd Wahab, M.Z.B.
|Issue Date:||2003||Abstract:||Piezoresistive pressure sensors were fabricated and tested electrically at MIMOS' foundry. The CMOS integrated circuit processing facilities were used to form the piezoresistive sensor. The electrical testing was done using source measuring unit (SMU) of Agilent 4070 and digital multimeter (DMM) of Agilent 3458A. The result showed that 97.6% of the dies or devices out of 2306 in a wafer meet the targeted specification. Therefore we could conclude that the fabrication of piezoresistive pressure sensors at MIMOS's foundry is very reliable. © 2003 IEEE.||URI:||http://dspace.uniten.edu.my:80/jspui/handle/123456789/5331|
|Appears in Collections:||COE Scholarly Publication|
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.