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|Title:||Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K||Authors:||Marshall, A.R.J.
|Issue Date:||2011||Journal:||Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K. IEEE Journal of Quantum Electronics, 47(6), 858-864. ||Abstract:||The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled. © 2011 IEEE.||DOI:||10.1109/JQE.2011.2128299|
|Appears in Collections:||COE Scholarly Publication|
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