DSpaceCRIS@UNITENThe DSpace digital repository system captures, stores, indexes, preserves, and distributes digital research material.http://dspace.uniten.edu.my/jspui2019-04-24T08:34:40Z2019-04-24T08:34:40Z5031Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodologyHashim, UdaShaari, Abu HassanAhmad, IbrahimShaari, SahbudinMajlis, Burhanudin Yeophttp://dspace.uniten.edu.my/jspui/handle/123456789/53392017-11-15T02:57:37Z1998-01-01T00:00:00ZTitle: Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology
Authors: Hashim, Uda; Shaari, Abu Hassan; Ahmad, Ibrahim; Shaari, Sahbudin; Majlis, Burhanudin Yeop
Abstract: The statistical design of experiment technique was used to study the influence of junction formation process variables on the diffusion sheet resistance. Two-level screening experiment with 23 factorial design was used to evaluate three process variables in eight combination runs. The factors were implementation dose of BF2 and Ar, drive-in temperature and drive-in time. The analysis of variance used to analyze the data shows that all main variables are important for arsenic implanted wafer and only drive-in temperature factor is important for boron implanted wafer.
1998-01-01T00:00:00ZAnalysis the effect of control factors optimization on the threshold voltage of 18 nm PMOS using L27 taguchi methodBte Atanb, N.Majlis, B.Y.Ahmad, I.Chong, K.H.http://dspace.uniten.edu.my/jspui/handle/123456789/111552018-12-07T00:30:29Z2018-01-01T00:00:00ZTitle: Analysis the effect of control factors optimization on the threshold voltage of 18 nm PMOS using L27 taguchi method
Authors: Bte Atanb, N.; Majlis, B.Y.; Ahmad, I.; Chong, K.H.
Abstract: This research paper is about the investigation of Halo Implantation, Halo Implantation Energy, Halo Tilt, Compensation Implantation and Source/Drain Implantation. They are types of control factors that used in achievement of the threshold voltage value. To support the successfully of the threshold voltage (VTH) producing, Taguchi method by using L27 orthogonal array was used to optimize the control factors variation. This analysis has involved with 2 main factors which are break down into five control factors and two noise factors. The five control factors were varied with three levels of each and the two noise factors were varied with two levels of each in 27 experiments. In Taguchi method, the statistics data of 18 nm PMOS transistor are from the signal noise ratio (SNR) with nominal-the best (NTB) and the analysis of variance (ANOVA) are executed to minimize the variance of threshold voltage. This experiment implanted by using Virtual Wafer Fabrication SILVACO software which is to design and fabricate the transistor device. Experimental results revealed that the optimization method is achieved to perform the threshold voltage value with least variance and the percent, which is only 2.16%. The threshold voltage value from the experiment shows -0.308517 volts while the target value that is -0.302 volts from value of International Technology Roadmap of semiconductor, ITRS 2012. The threshold voltage value for 18 nm PMOS transistor is well within the range of -0.302 ± 12.7% volts that is recommendation by the International Roadmap for Semiconductor prediction 2012. © 2018 Institute of Advanced Engineering and Science. All rights reserved.
2018-01-01T00:00:00ZAnalysis the effect of control factors optimization on the threshold voltage of 18 nm PMOS using L27 taguchi methodBte Atanb, N.Majlis, B.Y.Ahmad, I.Chong, K.H.http://dspace.uniten.edu.my/jspui/handle/123456789/104342019-01-09T08:44:06Z2018-01-01T00:00:00ZTitle: Analysis the effect of control factors optimization on the threshold voltage of 18 nm PMOS using L27 taguchi method
Authors: Bte Atanb, N.; Majlis, B.Y.; Ahmad, I.; Chong, K.H.
Abstract: This research paper is about the investigation of Halo Implantation, Halo Implantation Energy, Halo Tilt, Compensation Implantation and Source/Drain Implantation. They are types of control factors that used in achievement of the threshold voltage value. To support the successfully of the threshold voltage (VTH) producing, Taguchi method by using L27 orthogonal array was used to optimize the control factors variation. This analysis has involved with 2 main factors which are break down into five control factors and two noise factors. The five control factors were varied with three levels of each and the two noise factors were varied with two levels of each in 27 experiments. In Taguchi method, the statistics data of 18 nm PMOS transistor are from the signal noise ratio (SNR) with nominal-the best (NTB) and the analysis of variance (ANOVA) are executed to minimize the variance of threshold voltage. This experiment implanted by using Virtual Wafer Fabrication SILVACO software which is to design and fabricate the transistor device. Experimental results revealed that the optimization method is achieved to perform the threshold voltage value with least variance and the percent, which is only 2.16%. The threshold voltage value from the experiment shows -0.308517 volts while the target value that is -0.302 volts from value of International Technology Roadmap of semiconductor, ITRS 2012. The threshold voltage value for 18 nm PMOS transistor is well within the range of -0.302 ± 12.7% volts that is recommendation by the International Roadmap for Semiconductor prediction 2012. © 2018 Institute of Advanced Engineering and Science. All rights reserved.
2018-01-01T00:00:00Z