DSpaceCRIS@UNITENhttp://dspace.uniten.edu.my/jspuiThe DSpace digital repository system captures, stores, indexes, preserves, and distributes digital research material.Mon, 18 Oct 2021 03:43:00 GMT2021-10-18T03:43:00Z5031- Comparative high-K material gate spacer impact in DG-finfet parameter variations between two structureshttp://dspace.uniten.edu.my/jspui/handle/123456789/13036Title: Comparative high-K material gate spacer impact in DG-finfet parameter variations between two structures
Authors: Roslan, A.F.; Salehuddin, F.; Zain, A.S.M.; Kaharudin, K.E.; Ahmad, I.; Hazura, H.; Hanim, A.R.; Idris, S.K.
Abstract: This paper investigates the impact of the high-K material gate spacer on short channel effects (SCEs) for the 16 nm double-gate FinFET (DG-FinFET), where depletion-layer widths of the source-drain corresponds to the channel length. Virtual fabrication process along with design modification throughout the study and its electrical characterization is implemented and significant improvement is shown towards the altered structure design whereby in terms of the ratio of drive current against the leakage current (ION/IOFF ratio), all three materials tested being S3N4, HfO2 and TiO2 increases from the respective 60.90, 80.70 and 84.77 to 84.77, 91.54 and 92.69. That being said, the incremental in ratio has satisfied the incremental on the drive current as well as decreases the leakage current. Threshold voltage (VTH) for all dielectric materials have also satisfy the minimum requirement predicted by the International Technology Roadmap Semiconductor (ITRS) 2013 for which is at 0.461±12.7% V. Based on the results obtained, the high-K materials have shown a significant improvement, specifically after the modifications towards the Source/Drain. Compared to the initial design made, TiO2 has improved by 12.94% after the alteration made in terms of the overall ION and IOFF performances through the ION/IOFF ratio value obtained, as well as meeting the required value for VTH obtained at 0.464V. The ION from high-K materials has proved to meet the minimum requirement by ITRS 2013 for low performance Multi-Gate technology. © 2019 Institute of Advanced Engineering and Science. All rights reserved.
Tue, 01 Jan 2019 00:00:00 GMThttp://dspace.uniten.edu.my/jspui/handle/123456789/130362019-01-01T00:00:00Z
- Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methodshttp://dspace.uniten.edu.my/jspui/handle/123456789/11439Title: Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methods
Authors: Roslan, A.F.; Salehuddin, F.; M Zain, A.S.; Mansor, N.; Kaharudin, K.E.; Ahmad, I.; Hazura, H.; Hanim, A.R.; Idris, S.K.; Zaiton, A.M.; Zarina, B.Z.; Mohamad, N.R.; A Hamid, A.M.
Abstract: This paper investigates on the design and optimization of the input process parameter variations in Double Gate FinFET (DG-FinFET) device through comparisons between two different statistical methods through Taguchi and 2-k factorial design. This research focuses on the effects on threshold voltage (VTH ), leakage current (IOFF ), drive current (ION ), and the subthreshold voltage (SS) towards various parameter variations. The fabrication of the device as well as its electrical characterization are both performed using TCAD simulator, specifically ATHENA and ATLAS modules. Optimization of the process parameters is implemented and merged with the aforementioned modules. The comparisons are also conducted for the Taguchi and 2-k factorial design, statistical methods after implementation is done for both. The optimum condition for the process parameters are obtained with Polysilicon Doping Dose at Level 3 (3.7E14 atom/cm3), Polysilicon Doping Tilt at Level 3 (-17°), Source/Drain Doping Tilt at Level 1 (73°) and Threshold Voltage Doping dose at Level 2 (1.95E13 atom/cm3). The S/N ratio of Threshold Voltage, Leakage Current, Drive Current and Subthreshold Voltage values are in the predicted range of the International Technology Roadmap for Semiconductors (ITRS) 2015 prediction. Based on comparisons made, optimization approach works best and most suitable with the Taguchi method due to the consideration of noise factor used in the orthogonal array, despite the fact that both Taguchi and 2-k factorial design process is able to produce optimum solutions that are within the desired values. © Published under licence by IOP Publishing Ltd.
Mon, 01 Jan 2018 00:00:00 GMThttp://dspace.uniten.edu.my/jspui/handle/123456789/114392018-01-01T00:00:00Z
- Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Methodhttp://dspace.uniten.edu.my/jspui/handle/123456789/11440Title: Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method
Authors: Roslan, A.F.; Kaharudin, K.E.; Salehuddin, F.; Zain, A.S.M.; Ahmad, I.; Faizah, Z.A.N.; Hazura, H.; Hanim, A.R.; Idris, S.K.; Zaiton, A.M.; Mohamad, N.R.; Hamid, A.M.A.
Abstract: The simulation and statistical modeling are conducted using Silvaco TCAD tools and L9 orthogonal array (OA) of Taguchi method respectively to design a proposed layout of 10 nm gate length (Lg) Bilayer Graphene Field Effect Transistor (Bi-GFET). The investigated process parameters are halo implant dose. halo implant energy, source/drain (S/D) implant dose and source/drain (S/D) implant energy, while the noise factors are halo implant tilt angle and source/drain (S/D) implant tilt angle. The process parameters and the noise factors are optimized using the L9 orthogonal array (OA) of Taguchi method to achieve the highest possible ION/IOFF ratio. Utilizing both signal-to-noise ratio (SNR) and analysis of variance (ANOVA), the most dominant process parameters upon ION/IOFF ratio are identified as S/D implant energy and S/D implant dose with 56% and 37% factor effects on SNR respectively. The largest factor effects on SNR of S/D implant energy shows that it has dominantly affected the ION/IOFF ratio. The final results indicate that the 1.99 × 1013 atom/cm3 of halo implant dose. 174 keV of halo implant energy, 1.63 × 1014 atom/cm3 of S/D implant dose, 17 keV of S/D implant energy, 24° of halo implant tilt angle and 9° of S/D implant tilt angle are the best parameter setting in obtaining the highest Ion/Ioff ratio of the device which is measured at 4.811 × 105. © Published under licence by IOP Publishing Ltd.
Mon, 01 Jan 2018 00:00:00 GMThttp://dspace.uniten.edu.my/jspui/handle/123456789/114402018-01-01T00:00:00Z