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|Title:||High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control||Authors:||Mah, S.K.
Noor Faizah, Z.A.
|Issue Date:||2018||Journal:||Journal of Telecommunication, Electronic and Computer Engineering Volume 10, Issue 2-6, 2018, Pages 1-5||Abstract:||High-k dielectric oxides have been used to replace the widely used silicon dioxide (SiO2) gate dielectrics to overcome physical limits of transistor scaling. The thickness of high-k gate dielectric influences the threshold voltage (VTH) and off-state leakage current (IOFF). A device with high drive current (ION) and low IOFF gives a high on-off current ratio (ION/IOFF), which leads to a faster switching speed for the N-type Metal Oxide Semiconductor Field Effect Transistor (NMOS). In order to achieve the best ION/IOFF ratio for a predetermined range of VTH, halo implant was used to adjust the threshold voltage. The finding shows that optimum VTH and ION/IOFF ratio can be achieved by selecting the most suitable halo implant dose in a virtually fabricated 14nm gate-length La2O3-based NMOS device with varying high-k dielectric oxide thickness. © 2018 Universiti Teknikal Malaysia Melaka. All rights reserved.|
|Appears in Collections:||CCI Scholarly Publication|
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