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Title: Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method
Authors: Roslan, A.F. 
Kaharudin, K.E. 
Salehuddin, F. 
Zain, A.S.M. 
Ahmad, I. 
Faizah, Z.A.N. 
Hazura, H. 
Hanim, A.R. 
Idris, S.K. 
Zaiton, A.M. 
Mohamad, N.R. 
Hamid, A.M.A. 
Issue Date: 2018
Abstract: The simulation and statistical modeling are conducted using Silvaco TCAD tools and L9 orthogonal array (OA) of Taguchi method respectively to design a proposed layout of 10 nm gate length (Lg) Bilayer Graphene Field Effect Transistor (Bi-GFET). The investigated process parameters are halo implant dose. halo implant energy, source/drain (S/D) implant dose and source/drain (S/D) implant energy, while the noise factors are halo implant tilt angle and source/drain (S/D) implant tilt angle. The process parameters and the noise factors are optimized using the L9 orthogonal array (OA) of Taguchi method to achieve the highest possible ION/IOFF ratio. Utilizing both signal-to-noise ratio (SNR) and analysis of variance (ANOVA), the most dominant process parameters upon ION/IOFF ratio are identified as S/D implant energy and S/D implant dose with 56% and 37% factor effects on SNR respectively. The largest factor effects on SNR of S/D implant energy shows that it has dominantly affected the ION/IOFF ratio. The final results indicate that the 1.99 × 1013 atom/cm3 of halo implant dose. 174 keV of halo implant energy, 1.63 × 1014 atom/cm3 of S/D implant dose, 17 keV of S/D implant energy, 24° of halo implant tilt angle and 9° of S/D implant tilt angle are the best parameter setting in obtaining the highest Ion/Ioff ratio of the device which is measured at 4.811 × 105. © Published under licence by IOP Publishing Ltd.
DOI: 10.1088/1742-6596/1123/1/012046
Appears in Collections:UNITEN Scholarly Publication

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