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Title: Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film
Authors: Chelvanathan, P. 
Shahahmadi, S.A. 
Ferdaous, M.T. 
Sapeli, M.M.I. 
Sopian, K. 
Amin, N. 
Issue Date: 2018
Abstract: In this letter, we report the effects of preferred crystallographic orientation of Mo films on the formation of MoS2 layer through elemental sulphurization process. Vacuum thermal annealing of as-sputtered Mo films results in noticeable change in preferred crystallographic orientation from (1 1 0) to (2 1 1) plane. Correlation between structural and Raman spectroscopy study indicates that Mo film with predominantly (2 1 1) orientation results in pronounced formation of MoS2 compared to the film with the higher degree of (1 1 0) orientation. Planar packing factor, which depends on crystallographic orientation is proposed to play a crucial role in determining the degree of MoS2 formation. © 2018 Elsevier B.V.
Appears in Collections:UNITEN Scholarly Publication

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