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Title: Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium
Authors: Sahari, S.K. 
Kashif, M. 
Sutan, N.M. 
Embong, Z. 
Nik Zaini Fathi, N.A.F. 
Hamzah, A.A. 
Sapawi, R. 
Majlis, B.Y. 
Ahmad, I. 
Issue Date: 2017
Abstract: Purpose -The quality of GeOx-Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al2O3 on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al2O3 and Ge for HCl-And HF-last Ge surface. Design/methodology/approach -After wet chemical cleaning with HCl or HF, Al2O3 was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-Anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively. Findings - It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF-And HCl-last starting surface. Originality/value -The novelty of this work is to investigate the starting surface of Ge to IL growth between Al2O3/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.
DOI: 10.1108/MI-12-2015-0099
Appears in Collections:COE Scholarly Publication

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