Publications
(Others)

Results 1-20 of 29 (Search time: 0.0 seconds).

Issue DateTitleAuthor(s)
12014Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiodeMenon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Abdullah, S.F. 
22017Vth and ILEAK Optimization using taguchi method at 32nm bilayer graphene PMOSNoor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Menon, P.S. ; Afifah Maheran, A.H. 
32016Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET deviceKaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Zain, A. ; Abd Aziz, M.N.I. ; Ahmad, I. 
42014Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiodeMenon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Abdullah, S.F. 
52015Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratioKaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Aziz, M.N.I.A. ; Ahmad, I. 
62015Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi methodMaheran, A.H.A. ; Menon, P.S. ; Shaari, S. ; Ahmad, I. ; Faizah, Z.A.N. 
72016Statistical modelling of 14nm n-types MOSFETNoor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Siti Munirah, Y. ; Mohd Firdaus, R. ; Mah, S.K. ; Menon, P.S. 
82016Process parameters optimization of 14nm p-type MOSFET using 2-D analytical modelingNoor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Siti Munirah, Y. ; Mohd Firdaus, R. ; Mah, S.K. ; Menon, P.S. 
92016Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical ModellingNoor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Siti Munirah, Y. ; Mohd Firdaus, R. ; Md Fazle, E. ; Menon, P.S. 
102016Process parameter optimisation for minimum leakage current in a 22nm p-type MOSFET using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Salehuddin, F. ; Mohd Zain, A.S. 
112016Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFETNoor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Menon, P.S. 
122017Performance of nickel-based oxygen carrier produced using renewable fuel aloe veraAfandi, N.F. ; Devaraj, D. ; Manap, A. ; Ibrahim, N. ; Ahmad, I. 
132017Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate lengthAbidin, N.F.Z. ; Ahmad, I. ; Ker, P.J. ; Menon, P.S. 
142016Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET DeviceKaharudin, K.E. ; Hamidon, A.H. ; Salehuddin, F. ; Ifwat Abd Aziz, M.N. ; Ahmad, I. 
152014Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
162014Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
172016Modelling of 14NM gate length La2O3-based n-type MOSFETMah, S.K. ; Ahmad, I. ; Ker, P.J. ; Noor Faizah, Z.A. 
182015Modeling of 14 nm gate length n-Type MOSFETFaizah, Z.A.N. ; Ahmad, I. ; Ker, P.J. ; Roslan, P.S.A. ; Maheran, A.H.A. 
192016Modeling and simulation of InAs photodiode on electric field profile and dark current characteristicsRoslan, P.S.A. ; Ker, P.J. ; Ahmad, I. ; Pasupuleti, J. ; Fam, P.Z. 
202016Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOSAtan, N. ; Ahmad, I. ; Majlis, B.Y. ; Azle, M.F. 

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Credit Name
Ibrahim Ahmad Prof. Dr.
Full Name
Ahmad, I.
Variants
Ahmad, Ibrahim
Ahmad, Ibrahim b.
Ahmad, I
 
Email
AIbrahim@uniten.edu.my
 
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