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http://dspace.uniten.edu.my/jspui/handle/123456789/5990| Title: | InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes | Authors: | Ker, P.J. Marshall, A. Gomes, R. David, J.P. Ng, J.S. Tan, C.H. |
Issue Date: | 2011 | Journal: | InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. In IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp. 276-277). [6110533] | Abstract: | Avalanche gain and excess noise characteristics of InAs APDs showed that high gain can be achieved with excess noise factor F∼1.5 across temperatures ranging from 77 to 298K. © 2011 IEEE. | DOI: | 10.1109/PHO.2011.6110533 |
| Appears in Collections: | COE Scholarly Publication |
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