Publications
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Issue DateTitleAuthor(s)
12015Structural, morphological, electrical and electron transport studies in ZnO–rGO (wt% = 0.01, 0.05 and 0.1) based dye-sensitized solar cellAbdullah, H. ; Atiqah, N.A. ; Omar, A. ; Asshaari, I. ; Mahalingam, S. ; Razali, Z. ; Shaari, S. ; Mandeep, J.S. ; Misran, H. 
22015Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi methodMaheran, A.H.A. ; Menon, P.S. ; Shaari, S. ; Ahmad, I. ; Faizah, Z.A.N. 
32014Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
42014Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
52014Effect of process parameter variability on the threshold voltage of downscaled 22nm PMOS using taguchi methodMaheran, A.H.A. ; Menon, P.S. ; Shaari, S. ; Kalaivani, T. ; Ahmad, I. ; Faizah, Z.A.N. ; Apte, P.R. 
62014Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
72015Development of process parameters for 22 nm PMOS using 2-D analytical modelingMaheran, A.H.A. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Faizah, Z.A.N. 
82012Design and optimization of 22nm NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. 
92013Design and optimization of 22 nm gate length high-k/metal gate NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Salehuddin, F. 
102014Application of Taguchi method in designing a 22nm high-k/metal gate NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 

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Full Name
Shaari, S.
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