| Issue Date | Title | Author(s) |
| 1 | 2015 | Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method | Maheran, A.H.A. ; Menon, P.S. ; Shaari, S. ; Ahmad, I. ; Faizah, Z.A.N. |
| 2 | 2015 | Determination of impact damage severity level in Sheet Molding Compound composite material using thermography method - A preliminary study | Mohamed, A.A. ; Disele, T.L. ; Ahmad, I. ; Mohd, S. |
| 3 | 2015 | Development of process parameters for 22 nm PMOS using 2-D analytical modeling | Maheran, A.H.A. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Faizah, Z.A.N. |
| 4 | 2014 | Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method | Salehuddin, F. ; Mohd Zain, A.S. ; Idris, N.M. ; Mat Yamin, A.K. ; Abdul Hamid, A.M. ; Ahmad, I. ; Menon, P.S. |
| 5 | 2014 | Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. |
| 6 | 2015 | Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio | Kaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Aziz, M.N.I.A. ; Ahmad, I. |
| 7 | 2014 | Effect of process parameter variability on the threshold voltage of downscaled 22nm PMOS using taguchi method | Maheran, A.H.A. ; Menon, P.S. ; Shaari, S. ; Kalaivani, T. ; Ahmad, I. ; Faizah, Z.A.N. ; Apte, P.R. |
| 8 | 2013 | Threshold voltage optimization in a 22nm High-k/Salicide PMOS device | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Yusoff, Z. |
| 9 | 2014 | Reflow soldering process for Sn3.5Ag solder on ENIG using rapid thermal processing system | Adhila Muhammad, N. ; Bais, B. ; Ahmad, I. |
| 10 | 2014 | Statistical process modelling for 32nm high-K/metal gate PMOS device | Maheran, A.H.A. ; Noor Faizah, Z.A. ; Menon, P.S. ; Ahmad, I. ; Apte, P.R. ; Kalaivani, T. ; Salehuddin, F. |
| 11 | 2014 | Application of Taguchi method in designing a 22nm high-k/metal gate NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. |
| 12 | 2013 | Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Salehuddin, F. |
| 13 | 2012 | High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well | Menon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Abdullah, S.F. |
| 14 | 2012 | Modeling and optimizing of threshold voltage of 32nm NMOS transistor using L18 orthogonal array Taguchi method | Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. |
| 15 | 2012 | Statistical modeling of solar cell using Taguchi method and TCAD tool | Bahrudin, M.S. ; Abdullah, S.F. ; Ahmad, I. |
| 16 | 2012 | Technique to improve visibility for cycle time improvement in semiconductor manufacturing | Rahim, S.R.A. ; Ahmad, I. ; Chik, M.A. |
| 17 | 2012 | Design and optimization of 22nm NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. |
| 18 | 2011 | Effect of reflow soldering process on metallurgical bonding between Sn3.5Ag solder and ENIG substrates | Muhammad, N.A. ; Bais, B.H. ; Ahmad, I. ; Isnin, A. |
