1. DSpaceCRIS@UNITEN

Zaharim, A.

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Publications

Results 1-9 of 9 (Search time: 0.0 seconds).

Issue DateTitleAuthor(s)
12011Optimizing 35nm NMOS devices V TH and I LEAK by controlling active area and halo implantation dosageElgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A. 
22012Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal arraySalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hamid, A.M.A. ; Menon, P.S. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R. 
32010Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
42012Impact of different dose and angle in HALO structure for 45nm NMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
52010Effect of process parameter variations on threshold voltage in 45nm NMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
62011Cobalt silicide and titanium silicide effects on nano devicesElgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A. 
72010Characterization and optimizations of silicide thickness in 45nm pMOS deviceSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 
82011Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFETSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y. 
92010Analyze and optimize the silicide thickness in 45nm CMOS technology using Taguchi methodSalehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. 

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