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Ibrahim Ahmad Prof. Dr.

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Publications

Results 1-16 of 16 (Search time: 0.0 seconds).

Issue DateTitleAuthor(s)
12016Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET deviceKaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Zain, A. ; Abd Aziz, M.N.I. ; Ahmad, I. 
22014Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiodeMenon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Abdullah, S.F. 
32015Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratioKaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Aziz, M.N.I.A. ; Ahmad, I. 
42015Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi methodMaheran, A.H.A. ; Menon, P.S. ; Shaari, S. ; Ahmad, I. ; Faizah, Z.A.N. 
52016Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical ModellingNoor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Siti Munirah, Y. ; Mohd Firdaus, R. ; Md Fazle, E. ; Menon, P.S. 
62016Process parameter optimisation for minimum leakage current in a 22nm p-type MOSFET using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Salehuddin, F. ; Mohd Zain, A.S. 
72016Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET DeviceKaharudin, K.E. ; Hamidon, A.H. ; Salehuddin, F. ; Ifwat Abd Aziz, M.N. ; Ahmad, I. 
82014Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
92016Modeling and simulation of InAs photodiode on electric field profile and dark current characteristicsRoslan, P.S.A. ; Ker, P.J. ; Ahmad, I. ; Pasupuleti, J. ; Fam, P.Z. 
102016Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOSAtan, N. ; Ahmad, I. ; Majlis, B.Y. ; Azle, M.F. 
112016Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structureKaharudin, K.E. ; Salehuddin, F. ; Soin, N. ; Zain, A.S.M. ; Aziz, M.N.I.A. ; Ahmad, I. 
122014Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
132015Development of process parameters for 22 nm PMOS using 2-D analytical modelingMaheran, A.H.A. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Faizah, Z.A.N. 
142015Determination of impact damage severity level in Sheet Molding Compound composite material using thermography method - A preliminary studyMohamed, A.A. ; Disele, T.L. ; Ahmad, I. ; Mohd, S. 
152016Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOSKaharudin, K.E. ; Salehuddin, F. ; Zain, A.S.M. ; Aziz, M.N.I.A. ; Ahmad, I. 
162014Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array methodSalehuddin, F. ; Mohd Zain, A.S. ; Idris, N.M. ; Mat Yamin, A.K. ; Abdul Hamid, A.M. ; Ahmad, I. ; Menon, P.S. 

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Ibrahim Ahmad.jpg picture
Credit Name
Ibrahim Ahmad Prof. Dr.
Full Name
Ahmad, I.
Variants
Ahmad, Ibrahim
Ahmad, Ibrahim b.
Ahmad, I
 
Email
AIbrahim@uniten.edu.my
 
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